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THE INFORMATION CENTRE FOR OPTOELECTRONICSS

Optoelectronics PDF Datasheets, Circuit,Characteristics,Diagram,Price Of Optoelectronics.

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Latest Optoelectronics Data Sheet

  • Part Nnmber
  • Manufacturer
  • Description
  • W4NXD8C-S000
  • Cree 
  • Diameter 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition 
  • W6NXD3K-0000
  • Cree 
  • Diameter 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition 
  • W4NXD8D-0000
  • Cree 
  • Diameter 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition 
  • W4SRD0R-0D00
  • Cree 
  • Diameter 50.8mm; semi-insulating; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition 
  • W4NXD8C-L000
  • Cree 
  • Diameter 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition 
  • W6PXD3O-0000
  • Cree 
  • Diameter 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition 
  • W4SRD8R-0D00
  • Cree 
  • Diameter 50.8mm; semi-insulating; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition 
  • W6NRD0X-0000
  • Cree 
  • Diameter 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition 
  • W4NXD8C-0000
  • Cree 
  • Diameter 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition 
  • W4NXE4C-0D00
  • Cree 
  • Diameter 76.2mm; standard micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition 
  • W4NXE8C-0D00
  • Cree 
  • Diameter 76.2mm; standard micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition 
  • W6NXD0KLSR-0000
  • Cree 
  • Diameter 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition 
  • W4NXD8D-S000
  • Cree 
  • Diameter 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition 
  • W4NRD0X-0000
  • Cree 
  • Diameter 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition 
  • W6NXD3L-0000
  • Cree 
  • Diameter 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition 
  • W4TRD8R-0D00
  • Cree 
  • Diameter 50.8mm; semi-insulating; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition 
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